Selective growth and patterning already have precision in the sub angstrom range, over mms of distance. This is what 'TMU' is, when you read an ASML or Lam paper on the topic. Current target is sub nm, for total variation cross die per layer.
I strongly recommend a read of the Tennant's law series onnlithoguru, or Tim Brunner's paper on why optical lithography wins forever.in short, optical is better (including EUV).
There are whole conferences dedicated to atomically precise manufactue, and hundreds of not thousands of people working in the field.
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What is the magic technique?
Selective growth and patterning already have precision in the sub angstrom range, over mms of distance. This is what 'TMU' is, when you read an ASML or Lam paper on the topic. Current target is sub nm, for total variation cross die per layer.
I strongly recommend a read of the Tennant's law series onnlithoguru, or Tim Brunner's paper on why optical lithography wins forever.in short, optical is better (including EUV).
There are whole conferences dedicated to atomically precise manufactue, and hundreds of not thousands of people working in the field.