Why does the OP imply that there is some relation between the two products? It's true that both use litho and si, but they are dramatically different, internally.
Think of flash as a consumable media - it is, since each cell can only be erased a few hundred times. After all, that's what it means when the vendor says "200TBW for 256G device": you can expect 7-800 cycles per cell. This is also why vendors are pushing capacity so hard: it lets them push down the price while at the same time not needing to improve endurance.
So in some sense, the answer is "endurance", since the physics of flash erasure necessitate high capacity, and no one would buy the extra capacity unless it were also relatively cheaper. Whereas DRAM doesn't wear out...
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Why does the OP imply that there is some relation between the two products? It's true that both use litho and si, but they are dramatically different, internally.
Think of flash as a consumable media - it is, since each cell can only be erased a few hundred times. After all, that's what it means when the vendor says "200TBW for 256G device": you can expect 7-800 cycles per cell. This is also why vendors are pushing capacity so hard: it lets them push down the price while at the same time not needing to improve endurance.
So in some sense, the answer is "endurance", since the physics of flash erasure necessitate high capacity, and no one would buy the extra capacity unless it were also relatively cheaper. Whereas DRAM doesn't wear out...
OP is simply asking.