"The superjunction (SJ) charge balancing concept has been successfully implemented in silicon (Si) MOSFET power devices. Greater focus is now being placed on improving the performance metrics of wide bandgap (WBG) power devices with this technique. In this article, we summarize initial results that show promise in the application of the SJ structure in a lateral gallium nitride (GaN) Schottky diode."
Comments
"The superjunction (SJ) charge balancing concept has been successfully implemented in silicon (Si) MOSFET power devices. Greater focus is now being placed on improving the performance metrics of wide bandgap (WBG) power devices with this technique. In this article, we summarize initial results that show promise in the application of the SJ structure in a lateral gallium nitride (GaN) Schottky diode."